IMPEDANCE SPECTROSCOPY OF SILICON WHISKERS

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Study the Effect of Silicon Nanowire Length on Characteristics of Silicon Nanowire Based Solar Cells by Using Impedance Spectroscopy

Silicon nanowire (SiNW) arrays were produced by electroless method on polycrystalline Si substrate, in HF/ AgNO3 solution. Although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. In order to study the influence of etching time (which affects the SiNWs length) on d...

متن کامل

MICROSTRUCTURAL STUDY OF SILICON NITRIDE WHISKERS PRODUCED BY NITRIDATION OF PLASMA-SPRAYED SILICON LAYERS

plasma-sprayed silicon layers have been used to produce silicon nitride layers with fibrous microstructure which optimizes fracture toughness and strength. SEM examination of the specimens shows that the surface is covered by fine needles and whiskers of Si3N4.In order to study the oxygen contamination effect as well as other contaminants introduced during spraying and nitridation processes, su...

متن کامل

study the effect of silicon nanowire length on characteristics of silicon nanowire based solar cells by using impedance spectroscopy

silicon nanowire (sinw) arrays were produced by electroless method on polycrystalline si substrate, in hf/ agno3 solution. although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. in order to study the influence of etching time (which affects the sinws length) on d...

متن کامل

Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy

Articles you may be interested in Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes Appl.

متن کامل

Nanoscale Conductive Channels in Silicon Whiskers with Nickel Impurity

The magnetization and magnetoresistance of Si whiskers doped with to boron concentrations corresponding to the metal-insulator transition (2 × 1018 cm-3 ÷ 5 × 1018 cm-3) were measured at high magnetic fields up to 14 T in a wide temperature range 4.2-300 K. Hysteresis of the magnetic moment was observed for Si p-type whiskers with nickel impurity in a wide temperature range 4.2-300 K in...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Sensor Electronics and Microsystem Technologies

سال: 2012

ISSN: 2415-3508,1815-7459

DOI: 10.18524/1815-7459.2012.2.113208